Photoelectric Characteristics and Applications of Quantum Effect Photodetector

Abstract

Abstract This paper introduces the photon storage and current oscillation characteristics of a quantum effect photodetector and studies the high-sensitivity characteristics of the detector based on device model. The photodetector adopts AlAs/GaAs/AlAs double-barrier structure, and there is an InAs quantum dots and In0.15Ga0.85\u2009As quantum well in the GaAs wide well. In the bias voltage range of −1.5\u2009∼\u20091\u2009V, the dark current is about 0.1\u2009pA, when the device is biased at −1.15\u2009V, and the dark current of the device is 4.86\u2009×\u200910−15 A. Under 632.8\u2009nm laser irradiation, when the optical power is 0.01 pW, the current responsivity is 5.69\u2009×\u2009107 A/W, which has a large photoconductive gain. After the readout circuit and the photodetector are docked and packaged, it is found that the response voltage has a linear relationship with the integration time and the irradiation power. Based on the 1\u2009×\u200964 quantum dots photodetector array and readout circuit, a miniature quantum dots spectrometer was developed and the high-sensitivity characteristics of the photodetector were verified.