Investigation on gate dielectric material using different optimization techniques in carbon nanotube field effect transistors (CNFETs)

Abstract

This paper presents the analysis of gate dielectric materials using different optimization techniques for Carbon Nanotube Field Effect Transistors (CNFETs). The selection of best gate dielectric is done using Multi Criteria Decision Making (MCDM) method i.e. Ashby s, TOPSIS (Technique for Order Preference by Similarity to Ideal Solution) and VIKOR (VlseKriterijumska Optimizacija I Kompromisno Resenje in Serbian). The selection criteria for the best dielectric material is based on various material indices which include relative dielectric constant (er), energy band gap (Eg), conduction band offset (CBO) and coefficient of thermal expansion (CTE). This analysis concludes that lanthanum oxide (La2O3) is the most promising dielectric material followed by HfO2. All these material selection methodologies converge on the same results. This result is compared with the experimental findings and close match between analytical and experimental results confirm the validity of this study.