Progress in ferrimagnetic Mn4N films and its heterostructures for spintronics applications

Abstract

Mn4N is a typical transition metal nitride with antiperovskite structure. Mn4N films and Mn4N based heterostructures have attracted much attention for potential applications due to their ferrimagnetism, high thermal stability, perpendicular magnetic anisotropy and low saturation magnetization. The fascinating physical properties promise a series of novel applications in next-generation electronic, memory and energy-efficient devices. In this review, the progress of Mn4N films and its heterostructures are systematically summarized and discussed. In the 1st part, the various Mn–N compounds with different phases are introduced, and the basic properties of manganese nitrides are emphasized in details, especially for the properties, superiorities and applications in spintronics of Mn4N. The 2nd part summarizes the fabrication methods, structure and physical properties of Mn4N films. Besides, the underlying mechanisms of Mn4N films and other similar materials are briefly reviewed. In the 3rd part, the tunable magnetic properties of Mn4N films are discussed, including the manipulations methods of different Mn4N heterostructures in recent years. The 4th part highlights the physical properties of Mn4N films doped with other metals, including Co, Ni, and other heavy metal elements. The 5th part illustrates the potential applications of Mn4N films based on the physical properties discussed before. Finally, challenges and future prospects for Mn4N films are discussed, which could provide guidance for developing novel applications and designing functional devices.