Impact of Solvent type on the Structural, Surface morphology and Optical energy gap of Kesterite Cu2ZnSnS4 thin films deposited by solvothermal method

Abstract

In present work kesterite quaternary Cu2ZnSnS4 (CZTS) semiconductor thin films were prepared on fluorine-doped tin oxide (FTO) substrate by solvothermal method using different solvent types Ethylene glycol (EG), polyethylene glycol (PEG), and Ethylenediamine (ED). Crystal structure, surface morphology and optical characteristics of the prepared thin film were characterized by x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS) and UV–Vis absorption spectroscopies. X-ray diffraction results reveal that the deposited films have polycrystalline nature and in a kesterite phase (tetragonal structure). the crystallite size is in the rang (20-27) nm and the largest one is for the prepared by using PEG solvent. The films surface morphology shows smooth and uniform surface with well distributed spherical particles with largest particles for the films deposited by EG solvent. The EDS spectra confirmed the the existence of the elements Cu, Zn, Sn and S of the films composition. The direct optical energy gap shows different values caused by using different solvent type, where the lower band gap is about 1.56 eV and the largest is about 1.9 eV for the films using ED and EG respectively.