Robust perpendicular magnetic anisotropy of \nCo3Sn2S2\n phase in sulfur deficient sputtered thin films

Abstract

Perpendicular magnetic anisotropy (PMA) in magnetic thin films is a fundamental key feature in the design of spintronic devices. As one of magnetic Weyl semimetals, ${\\mathrm{Co}}_{3}{\\mathrm{Sn}}_{2}{\\mathrm{S}}_{2}$ has been studied for its large anomalous Hall effect (AHE), uniaxial crystalline magnetic anisotropy, and half metallicity. In this study, we investigated the effect of off-stoichiometric composition on the PMA and AHE of ${\\mathrm{Co}}_{3}{\\mathrm{Sn}}_{2}{\\mathrm{S}}_{x}$ thin films fabricated by the sputtering technique. The prepared thin films have off-stoichiometric S compositions $x$ of 1.54 (S poor) and 3.27 (S rich) as well as the nearly stoichiometric one of 2.02. In addition to the ${\\mathrm{Co}}_{3}{\\mathrm{Sn}}_{2}{\\mathrm{S}}_{2}$ phase, the segregated Co metal is found to contribute to the measured magnetization in the S-poor and S-rich films. The coercive field of perpendicular magnetization in all the films is much larger than that in the ${\\mathrm{Co}}_{3}{\\mathrm{Sn}}_{2}{\\mathrm{S}}_{2}$ bulk crystals despite the fact that effective perpendicular magnetic anisotropy constants (${K}_{\\mathrm{u}}^{\\mathrm{eff}}$) between the prepared films are significantly different. In addition, the ${K}_{\\mathrm{u}}^{\\mathrm{eff}}$ values of two samples with $x=2.02$ and 2.22 are comparable to those of the bulk crystals. In contrast to the isotropic magnetization behavior in the S-rich film, the S-poor film holds the PMA feature. This result means that the PMA is more robust in the S-poor film than in the S-rich film. For the electrical transport properties, a large tangent of Hall angle of about 0.2 is observed for both the nearly stoichiometric and the S-poor films. This large tangent of Hall angle demonstrates that the Weyl feature of ${\\mathrm{Co}}_{3}{\\mathrm{Sn}}_{2}{\\mathrm{S}}_{2}$ phase is well maintained even in the S-poor thin films as well as the nearly stoichiometric films although the amount of Co segregation in both S-poor and S-rich films is similar. Our findings on the influence of off-stoichiometry on the PMA and AHE are beneficial to design magnetic devices incorporated with the Weyl features of ${\\mathrm{Co}}_{3}{\\mathrm{Sn}}_{2}{\\mathrm{S}}_{2}$.