Numerical Simulation of High Al Component AlGaN Films Grown by MOCVD

Abstract

AlGaN material can cover the ultraviolet spectrum by changing the Al component. When AlGaN films are grown by MOCVD, the Al component in the film has an important influence on the electrical properties. In this paper, the AlGaN film grown in the electromagnetic heating MOCVD reaction chamber is modeled and simulated, the effects of temperature, pressure, and carrier gas composition on the growth rate of the film and the change of Al composition were investigated. The objective is to optimize the growth parameters by studying the growth rate of the film and the variation of the Al composition with these factors. It is found that increasing the temperature will lower the growth rate, but the Al content in the film increases. Increasing the pressure will reduce the growth rate of the film and the Al component content. Appropriately increasing the nitrogen content in the carrier gas can promote the gas phase reaction of TMAl and TMGa, and the effect on the chemical reaction path of Al-containing substances is more obvious.