Mid-Infrared Supercontinuum Generation in Germanium Waveguides

Abstract

On-chip mid-infrared (mid-IR, from 3 to 15 μm wavelength) supercontinuum (SC) generation is of great interest for integrated sensing devices, since it enables parallel detection of multiples species [1] . The generation of mid-IR SC in group IV platforms is particularly significant, since it would allow low-cost, large-scale production and electro-optic integration. Mid-IR SC generation has been demonstrated in several group-IV platforms [1] – [4] . Recently, the wide transparency window up to 15 μm and theoretical predictions of attractive nonlinear properties [5] led researchers to explore germanium as a promising material for mid-infrared photonics. However, experimental SC generation in pure germanium waveguides remained elusive so far. Our group reported SC generation up to 8.5 μm in silicon-germanium on silicon waveguides [3] . We have also demonstrated the possibility, with this platform, of precisely controlling the SC coherence properties [6] – [8] . The great potential of germanium-based platforms for on-chip mid-IR SC generation was recently confirmed, with the demonstration of a SC extending from 3 up to 13 μm in a germanium-rich graded index silicon-germanium on silicon waveguide [9] . To achieve such a broad spectrum, however, the waveguide was pumped at 7.5 μm, whereas short wavelength pumps are preferable in fully integrated broadband sources.