Sheet-rich Silk-base RRAM with Low Switching Voltages and Improved Reliabilities

Abstract

Regenerated silk, a fibrous protein-based biopolymer, has attracted much research attention over the past decades due to its excellent mechanical properties and biological properties. Recently, silk fibroin has also been considered as potential candidates for resistive memories (RRAMs), especially in wearable electronics due to their biocompatibility1,2. However, in spite of promising proof-of-concept demonstration, silk-based RRAMs still suffer from high programming voltages, limited endurance, and large device variations.