Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation

Abstract

Molybdenum disulfide (MoS 2 ) is a widely studied two-dimensional (2D) semiconductor with high potential as channel material in field effect transistors (FET) [1] . A major challenge for MoS 2 -based FETs is low hysteresis operation [2] . Al 2 O 3 is a common encapsulation layer or gate dielectric, even though it causes an n-doping effect on MoS 2 -FETs after their encapsulation [3] , [4] . Here, we present a method for scalable MoS 2 FET gate dielectric deposition and encapsulation using a stack of monolayer hexagonal boron nitride (h-BN) and Al 2 O 3 . This heterostructure prevents the n-doping effect of Al 2 O 3 and leads to reduced hysteresis even under ambient conditions.