Stress-Engineered AlGaN/GaN High Electron Mobility Transistors Design

Abstract

The performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) can be improved using the strain engineering technique. We have investigated the role of nitride passivation layer induced stress/strain on the spontaneous and piezoelectric polarization in nitride/AlGaN/GaN heterostructures with particular emphasis on the drain current. The variation of stress profile due to change in nitride layer thickness has been presented. The study encompasses topography simulation, which realistically reproduces an experimental HEMT and the stress distribution in the device.