Temperature Variation Analysis of SiGe Source based Heterojunction Tunnel FETs

Abstract

This paper presents a tunnel field effect transistor (TFET) as an alternative to suppress the effect of temperature on device performance. The device used is SiGe based heterojunction TFET with a hetero-dielectric buried oxide layer. We have analyzed the device with a temperature variation from 200 Kelvin to 400 Kelvin. The device parameters analyzed are Energy band gap, ON current, OFF current, subthreshold swing, and ION/IOFF ratio. From the results obtained, it can be established that the OFF current strongly depends on the temperature, while the ON current is weakly dependent on the temperature. However, a higher ION/IOFF ratio has been maintained with the highest and lowest values achieved as 7.53×1013 and 1.9×107 at an ambient room temperature (T = 300 K), and the minimum and maximum values of the subthreshold swing obtained are 19.5 mV/decade and 58.3 mV/decade, respectively. The results achieved have been compared with the homojunction TFET device at the same device parameters. All the simulations have been carried on the licensed version of Visual TCAD.