Work-Function Modulated GAA MOSFET for Improved Electrostatic Controllability in Lower Technology Node

Abstract

In a continuous effort to keep the Moore’s law alive in lower technology node without deteriorating the device performance, several device engineering techniques are introduced. These engineering techniques involve channel engineering and gate metal engineering also. Evolution of Multi gate MOSFET devices from conventional planar structure to gate all around (GAA) is continuously going on. With unique design, GAA MOSFET is measured as one of the best devices for better electrostatic control. The threshold voltage of a device depends on the work function of metal gate electrode. This work introduced a linearly modulated work function (5eV-4eV) metal gate along z-axis. This work demonstrates the advantages of work function modulated metal gate on the DC performance characteristics in lower technology nodes. An improved drain current (Id) with lower threshold voltage (Vth) indicates the superiority of the device for future generation applications.