Drive parameters analysis considering the crosstalk effect of silicon carbide MOSFET in a Phase-leg configuration

Abstract

Silicon carbide MOSFET is gradually replacing silicon devices as the preferred power devices with its advanced performance. However, in practical application, the interaction in a SiC MOSFET phase-leg configuration may lead one switch turn on by error, which is called the crosstalk effect and will cause catastrophic damage to the circuit. This paper proposed a mathematical model for analyzing the crosstalk effect of SiC MOSFET. The model considered the parasitic inductance in the loop and the possible added capacitor between gate and source and systematically investigated the influence of multi parameters on the crosstalk effect. The circuit parameters dependence of the crosstalk effect provides theoretical implications and practical guidelines for the gate drive design of SiC MOSFET. The crucial to utilize the active clamp function in the commercial driver chip to suppress crosstalk is to reduce the parasitic inductance. Experiment results validate the driving resistance and the added capacitor dependence of the crosstalk effect.