A Novel High Power 4H-SiC Unipolar Diode with Advanced Performance

Abstract

A novel high power silicon carbide unipolar diode without schottky barrier, named trenched junction barrier diode, is demonstrated having excessive low conduction loss at high blocking voltage level. The simulated results show that the designed 4H silicon carbide junction barrier diode with a blocking voltage higher than 3300V obtains a low forward voltage drop of 1.52V at 100A/cm2. Meanwhile, there is only small degradation of its reverse blocking characteristic. Which means about 32% conduction loss can be saved, compared to junction barrier schottky diode at the same blocking voltage level.