2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) | 2021

Dynamics of Negative Capacitance induced by Ferroelectric Switching in Ferroelectric-Resistor Circuit

 
 
 
 
 
 

Abstract


The dynamics of negative capacitance (NC) in ferroelectric-resistor (FE-R) circuit is discussed on the basis of electrostatics and Kolmogorov-Avrami-Ishibashi model, followed by its experimental confirmation. Both formulation and experiment results suggest that slower charge compensation than ferroelectric switching is the key to obtain the NC effect. These results provide new insights into engineering the NC effects in FeFET.

Volume None
Pages 1-3
DOI 10.1109/EDTM50988.2021.9421055
Language English
Journal 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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