Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells

Abstract

The spin orbit torque magnetic random access memory (SOT-MRAM) combines non-volatility, high speed, and high endurance and is suited for applications in caches. However, its development is still hindered by relatively high switching currents in in-plane magnetized structures and the need of an external magnetic field for deterministic switching of perpendicular layers. We employ the two-pulse switching scheme to achieve deterministic sub-500ps and field-free switching in in-plane cells with weak perpendicular anisotropy and perpendicular rectangular structures.