Device simulations of ion-sensitive FETs with arbitrary surface chemical reactions

Abstract

In this work, we exploit the general-purpose solver COMSOL, equipped with electrolyte and semiconductor physics modules, to implement a versatile model of potentiometric chemical sensors including arbitrarily complex surface reactions at the oxide/electrolyte interface with examples on 2D devicelevel simulations of an ISFET. Firstly, Multiphysics simulations of VTH sensitivity to pH sensing are compared with analyses based on semiconductor TCAD. Then, more complex Na+ sensing experiments are examined and numerical simulations are compared against 1D electrochemical models.