Questions of Control of Electrophysical Properties of Materials and Structures of Microelectronic Sensors

Abstract

the problem of ensuring the parametric and temporal stability of sensors of physical quantities is particularly relevant for microelectronic sensors. This is due to their inadequate resistance to temperature, vibration and radiation. high-temperature technological operations of the formation of sensor elements and structures of semiconductor sensitive elements contribute to the generation of defects and the appearance of structural and temperature mechanical stresses, too. These imperfections and stresses affect almost all the electrical characteristics of the components and nodes of the sensors. This effect is manifested in an increase in leakage currents and a decrease in breakdown voltages, an increase in noise, a decrease in the service time of sensors, and so on. Due to relaxation phenomena in materials and heterogeneous structures of sensors, there is an unpredictable time drift of technical characteristics. This drift can not be taken into account and programmed. Therefore, without compensation of internal voltages, digital and analog error compensation methods cannot be used. To increase the stability, a number of constructive- technological methods of compensation have been proposed, the main one being film compensation, based on the formation of a multilayer film composition on the surface of an elastic element.