2019 IEEE 16th International Conference on Group IV Photonics (GFP) | 2019
Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors
Abstract
Ge-on-Si single-photon avalanche diode (SPAD) detectors have demonstrated a high single-photon detection efficiency of 38% at a wavelength of 1310 nm when operated at a temperature of 125 K. These devices exhibit reduced afterpulsing compared to InGaAs/InP SPADs under nominally identical operating conditions.