2019 5th International Conference on Advances in Electrical Engineering (ICAEE) | 2019
Performance Analysis of Nanoscale Carbon Nanotube Field Effect Transistor considering the Impacts of Temperature and Gate Dielectrics
Abstract
Carbon nanotubes are considered as nearly ideal one-dimensional nanoscale systems which exhibit strongly pronounced chirality-dependent optoelectronic properties. The quasi-ideal electronic properties of the nanoscale carbon nanotube enhance the performance of the field effect transistor due to its high carrier mobility and ballistic electrical transport. This study focuses on the performance parameters of the carbon nanotube field effect transistor (CNTFET) like on-state current, leakage current and the current ratio ($I_{ON}/I_{OFF}$) which strongly modulated by the temperature of the devices and dielectric constant of gate insulators. A comprehensive numerical quantum simulation model based on cubic spline approximation of non-equilibrium mobile charge density is developed to explore the dependency of temperature and dielectrics on electrical transport characteristics of a nanoscale Schottky barrier CNTFET under ballistic conditions. This comparative analysis demonstrates that high dielectric gate insulator enhances the charge carrier injection into transistor channels and degrading the leakage current. Furthermore, at low-temperature device attributes remarkably high on/off ratio due to dominant quantum tunneling mechanism and reduced short channel effects. High-speed CNTFET can be obtained by optimizing the $I_{ON}/I_{OFF}$ by the integration of materials with high dielectric constant and proper operating temperature.