Femtosecond Laser Fault Injection into External SRAM Implementations

Abstract

The sensitive area of the integrated circuit is affected by the femtosecond laser pulse, which causes single-event effect. The more common types of errors are single-event upsets (SEU) and multiple-bit upset (MBU). Unlike other pulsed lasers, when the femtosecond laser interacts with the semiconductor, the main physical processes are not only linear absorption, but also two-photon absorption. It is difficult to describe such phenomena with multiple mechanisms. This paper presents a statistical model to estimate the probability of a single-event effect caused by femtosecond laser fault injection. The model combines the effective space and bit filp probability of a single duty cycle of an integrated circuit, and uses an error feedback system based on FPGA to control and monitor the error-prone Static Random-Access Memory (SRAM). The result predicted by the model are more consistent with the actual experiment result. It can be used as reference values.