Terahertz GaN Schottky Varactor Based on Inverted Trapezoidal Metal-brim Terminal Structure

Abstract

GaN Schottky barrier varactor based on inverted trapezoidal metal-brim terminal structure was first proposed for terahertz frequency multiplier application. Compared with conventional varactor, simulation results show that inverted trapezoidal metal-brim structure effectively increases capacitance modulation capability, reduces the tunneling current and improves the breakdown characteristics. Thus, the proposed terminal structure could optimize the performance of GaN terahertz frequency multiplier, which could be widely used in Terahertz communication regions, imaging systems, radiometers, and so on.