2019 22nd International Conference on Electrical Machines and Systems (ICEMS) | 2019
Design and Performance Analysis of High-Speed Induction Motor Drives Based on SiC Device
Abstract
Silicon carbide (SiC) MOSFETs are perceived as future replacements for Si IGBTs in medium- and low-voltage drives due to their low conduction and switching losses. The application of SiC devices can greatly increase the switching frequency of the motor drives, thus providing the possibility of improving control performance. A high-speed induction motor drive based on SiC power device is proposed in this paper. The control structure and drive circuit of SiC motor drive were designed and verified. And then the performance with different switching frequencies was compared and studied. In most cases, the increased switching frequency of the motor drive improves system control performance. Some problems and challenges were also discussed.