High-speed uni-travelling carrier photodiode at 1064nm wavelength

Abstract

High-speed back-illuminated uni-traveling-carrier photodiodes (UTC PDs) at 1064nm are demonstrated grown on InP with 3-dB bandwidth of 16.8GHz, using InGaAsP as absorption layer. PDs with $40-\\mu\\mathrm{m}$ -diameters deliver RF output power levels as high as 18.8 dBm at 14GHz. A model based on S-parameter fitting aimed at extracting parameter to assess the bandwidth limiting factors.