2019 IEEE International Integrated Reliability Workshop (IIRW) | 2019
Middle of the Line Dielectrics Reliability and Percolation Modelling through 65nm to 28nm Nodes
Abstract
We report here reliability analysis of the CMOS technology middle of the line dielectrics from 65nm, 40nm and 28nm nodes. Time to breakdown characteristics of spacers including voltage acceleration factor, Weibull slope and activation energy is extracted and compared numerical percolation model.