Evaluation of Device Performance on AlGaN/InGaN/GaN High Electron Mobility Transistors (HEMTs) using TCAD Software

Abstract

In recent years, High-Electron-Mobility Transistors (HEMTs) have received great attention for its superior electron transport guaranteeing high speed and high- p o w e r applications. HEMT devices are competitors with and substitution previous field-effect transistors (FETs) with amazing performance at high frequency, improved power density and satisfactory potency. This work concentrates on designing and simulating the AlGaN/InGaN/GaN High electron mobility transistor by using the TCAD simulation software and evaluating the drain current and breakdown voltage performances. The obtained output will be brought in comparison with the existing AlGaN/GaN HEMT and the device performances will prove to be better for the proposed structure. Other parameters such as threshold voltage Vth, On/Off current and transconductance (gm) could be evaluated in TCAD for this structure. The effect of proton irradiation on the DC performance of InGaN/GaN HEMT with dielectric layers will be studied later. The basic mechanism underlying the high radiation tolerance appears to be the strong internal piezoelectric field near the two- d i m e n s i o n a l electron gas (2DEG). The radiation damage occurring in the proposed HEMT structure will be compared with that of the effects in AlGaN/GaN hetero-structure and will be validated.