Design of a 120GHz Doubler based on AlGaN/GaN Schottky diode

Abstract

Compared with Gallium Arsenide material, GaN device has better power endurance characteristics, and hence has great potential in the development of high power source. This paper proposes a heterojunction structure of GaN Schottky diode to improve the electron mobility of the device, and the cut-off frequency is over 250 GHz. Furthermore, a 120 GHz doubler is designed based on the proposed device. The simulated result shows that the conversion efficiency reaches 15% when the input power is 1 W.