Spectroscopic Ellipsometry of InSb in the Terahertz Region

Abstract

Herein we show the terahertz (THz) time-domain ellipsometry investigation of the InSb semiconductor. At room temperature, the carriers of InSb are thermally excited to the conduction band due to its narrow bandgap. We, nevertheless, show that THz ellipsometry can detect subtle differences between carrier densities of undoped and lightly doped InSb bulk semiconductors. The advantage of THz ellipsometry over other THz time-domain spectroscopy techniques is that it does not require reference measurements through an aperture or standard mirrors.