Terahertz Emission from an Asymmetric Dual-Grating-Gate InGaAs High-Electron-Mobility Transistor Stimulated by Plasmonic Boom Instability

Abstract

Asymmetric dual-grating-gate InGaAs high-electron-mobility transistors (ADGG-HEMTs) are studied as plasmonic terahertz (THz) emitters. We experimentally observed THz emission from a fabricated device at 110K. The spectra showed a broadband resonant emission under low d.c. channel currents reflecting radiation decay of thermally excited plasmons. With increasing the current and longitudinal electric field the emission was enhanced in a narrower spectral range suggesting promotion of plasmonic instability. Its threshold behavior suggests the occurrence of plasmonic-boom-type instability.