A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability

Abstract

This paper proposes a physical-statistical approach to AIGaN/GaN HEMT reliability applied to forward gate bias stress. The Ig- Vgcharacteristics are fitted to a physical conduction model as a function of temperature and field. From the model, the acceleration factors for field and temperature are extracted, and used to predict the lifetime for given use condition. All time-to-fail data are used in the lifetime extrapolation in a self consistent manner. The data follow a LogNormal rather than a Weibull distribution.