2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) | 2019
Driving GaN Power Transistors
Abstract
In order to take full advantage of fast and efficient switching performance of emerging GaN power devices, it is important for circuit designers to understand the unique features of power GaN devices and their limitations. It is also important to appreciate new opportunities and challenges that these new devices have brought to the society. Motivated by this, this paper reviews some critical design issues in developing modern GaN based power ICs, with focus on reliability, noise, efficiency, speed and cost. State-of-art design solutions are also briefly reviewed.