High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C

Abstract

In the present work, we testify a strategy to achieve high-performance ZnO thin film transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more than 100 °C. Interestingly, the ZnO TFTs exhibit superior electrical properties, including a field-effect mobility of 14.32 cm²V⁻¹s⁻¹, a sub-threshold swing of 0.21 V/decade, and an on-to-off current ratio of <inline-formula> <tex-math notation= LaTeX >$3.03\\times 10^{7}$ </tex-math></inline-formula>. Also, ideal uniformity, hysteresis property, contact resistance, and stability are achieved. Threshold voltage shift (<inline-formula> <tex-math notation= LaTeX >$\\Delta \\text{V}_{\\mathrm{ TH}}$ </tex-math></inline-formula>) under positive and negative bias stress are 0.17 and −0.18 V, respectively. Moreover, the ZnO TFTs manifest good mechanical performance at a bending radius of 10 mm. We expect that our findings propel practical application of the oxide TFTs in flexible electronics.