Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Abstract

Carrier velocity modulation by asymmetrical concave quantum barriers to improve the performance of AlGaN-based deep-ultraviolet light emitting diodes has been investigated. The concave structure is realized by inserting a low Al composition AlGaN layer in the barrier, and thus forming a concave region on energy band. The measured device performance shows a significant improvement under 0–250\xa0mA operation current, with the maximum external quantum efficiency and light output power of 1.02% and 8.0\xa0mW, which are more than double (2.32 and 2.35 times) of that for the conventional one, respectively. Simulation confirms that the concave quantum barriers make it possible for electrons to be scattered, which reduce the electron energy before being injected into quantum wells, and thus the capability of quantum wells to capture electrons is enhanced. Meanwhile, the vertical transport of holes within the active region is also enhanced because the asymmetrical setting of the concave layer in the quantum barriers helps holes accelerate under the polarization field, and then get more energy to overcome the barrier.