IEEE Journal of Solid-State Circuits | 2021

RRAM-DNN: An RRAM and Model-Compression Empowered All-Weights-On-Chip DNN Accelerator

 
 
 
 
 
 
 
 
 
 
 
 
 

Abstract


This article presents an energy-efficient deep neural network (DNN) accelerator with non-volatile embedded resistive random access memory (RRAM) for mobile machine learning (ML) applications. This DNN accelerator implements weight pruning, non-linear quantization, and Huffman encoding to store all weights on RRAM, enabling single-chip processing for large neural network models without external memory. A four-core parallel and programmable architecture adapts to various neural network configurations with high utilization. We introduce a customized RRAM macro with a dynamic clamping offset-canceling sense amplifier (DCOCSA) that achieves sub-microampere input offset. The on-chip decompression and memory error-resilient scheme enables 16 million (M) 8-bit (decompressed) weights on a single-chip using 24 Mb RRAM. The proposed RRAM-DNN is the first digital DNN accelerator featuring 24 Mb RRAM as all-on-chip weight storage to eliminate energy-consuming off-chip memory accesses. The fabricated design performs the complete inference process of the ResNet-18 model while consuming 127.9 mW power in TSMC-22 nm ULL CMOS. The RRAM-DNN accelerator achieves peak performance of 123 GOPs with 8-bit precision, exhibiting measured energy efficiency of 0.96 TOPs/W.

Volume 56
Pages 1105-1115
DOI 10.1109/JSSC.2020.3045369
Language English
Journal IEEE Journal of Solid-State Circuits

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