IEEE Electron Device Letters | 2019
Low-Frequency Noise Characteristics in Multilayer MoTe2 FETs With Hydrophobic Amorphous Fluoropolymers
Abstract
This letter investigates the low-frequency noise (LFN) properties of the multilayer MoTe<sub>2</sub> field-effect transistors (FETs) before and after hydrophobic amorphous polymer (CYTOP) encapsulation in the subthreshold and linear regimes. The noise spectrum density of drain current (S<sub>ID</sub>) shows that the LFN in the multilayer MoTe<sub>2</sub> FETs nicely fits to a 1/<inline-formula> <tex-math notation= LaTeX >$f^{\\gamma }$ </tex-math></inline-formula> power law with <inline-formula> <tex-math notation= LaTeX >$\\gamma \\sim \\textsf {1}$ </tex-math></inline-formula> in the frequency range of 10–200 Hz. From the dependence of S<sub>ID</sub> on the drain current, carrier number fluctuation (<inline-formula> <tex-math notation= LaTeX >$\\Delta n$ </tex-math></inline-formula>) is considered as a dominant LFN mechanism from all operation regimes in the multilayer MoTe<sub>2</sub> FETs. Extracted trap density (N<sub>t</sub>) based on the McWhorter model in this letter was reduced at least more than one order level compared with the multilayer MoTe<sub>2</sub> FETs without CYTOP passivation.