InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength

Abstract

High-speed back-illuminated InGaAsP/InP uni-traveling-carrier photodiodes (PDs) at 1064 nm were demonstrated with 3-dB bandwidth of 17.8 GHz at −5-V bias. PDs with 40-<inline-formula> <tex-math notation= LaTeX >$\\mu \\text{m}$ </tex-math></inline-formula>-diameter deliver RF output power as high as 19.5 dBm at 13 GHz. This structure can achieve low dark current density of <inline-formula> <tex-math notation= LaTeX >$1\\times 10^{-8}$ </tex-math></inline-formula> A/cm²at −5-V bias and quantum efficiency of 45.2% at 1064 nm. An analytical model based on <inline-formula> <tex-math notation= LaTeX >$S$ </tex-math></inline-formula>-parameter fitting was built to extract parameter to assess the bandwidth limiting factors.