High-Speed and High-Power MUTC Photodiode Working at 1064 nm

Abstract

We demonstrate low-dark-current, high-speed and high-power back-illuminated flip-chip-bonded modified uni-traveling carrier photodiodes operating at 1064 nm. The photodiodes with <inline-formula> <tex-math notation= LaTeX >$15~\\mu \\text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation= LaTeX >$18~\\mu \\text{m}$ </tex-math></inline-formula> diameters achieve 18.6 dBm RF output power at 55 GHz and 19.4 dBm RF output power at 41 GHz, respectively. The bandwidth is analyzed with parameters obtained from S-parameter fitting. There is good agreement between measured and calculated bandwidths.