Memory effect in MIS structures with embedded all-inorganic colloidal silicon carbide (SiC) nanocrystals

Abstract

Colloidal all-inorganic silicon carbide (SiC) nanocrystals (NCs) have been introduced into Metal-InsulatorSemiconductor (MIS) structures with HfOx gate dielectric layers. The fabricated MIS structures were characterized by means of stress-and-sense measurements in terms of device capacitance, flat-band voltage shift, and retention time. The presented results have shown the feasibility of the application of SiC-NCs in memory structures.