Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors

Abstract

working temperature is a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector. An optimal device temperature can ensure the best response sensitivity. Therefore, we analyze the effect of device temperature on the response sensitivity characteristics of GaAs-based BIB detector by numerical simulation. The simulated result shows that the optimal device temperature is nearly 6K.