Ka-Band 3-Stack Power Amplifier with 18.8 dBm Psat and 23.4 % PAE Using 22nm CMOS FDSOI Technology

Abstract

This paper presents a fully integrated, three-stack power amplifier for 5G wireless systems, designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation is from 25 GHz to 30.5 GHz, with a maximum 3 dB bandwidth of 5.5 GHz and a maximum gain of 9.9 dB. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point are 18.8 dBm, 23.4% and 14.9dBm, respectively, achieved at 28.5 GHz.