2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) | 2019

PECVD based layers for improved high temperature industrial Solar cell processes



In this contribution, we present developments aiming at overcoming remaining challenges for an industrial process integration of passivating contact technologies. In particular, SiCx-based hole and electron passivating contacts activated respectively during a short and a long annealing step are developed. Implied Voc s up to 730mV have been obtained on symmetrical structures featuring SiCx(p) layers having undergone short annealing, and above 750mV for those featuring SiCx(n) submitted to long annealing. Finally, these contacts are implemented as easy add-ons in existing industrial PERC/PERT like cell architectures. First integration tests of SiCx(p) in PERC like cell featuring front phosphorous emitter have led to Voc of 686mV and cell efficiency up to 21.7% on 6inch p-type Cz. Integration of SiCx(n) in PERT like solar cells featuring a front boron emitter enabled Voc of 691mV and efficiency of 22.5% on 6 inch n-type Cz.

Volume None
Pages 2196-2199
DOI 10.1109/PVSC40753.2019.8980583
Language English
Journal 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

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