Optimization of photoelectron in-situ sensing device in FD-SOI

Abstract

Previously, we demonstrated a photoelectron in-situ sensing device (PISD) used as one-transistor active pixel sensor (APS) fabricated in advanced 22 nm FD-SOI technology. In this work, we employ TCAD simulation to systematically study the impact of device parameters on its performance. The buried oxide (BOX) thickness and active device length (LA) exert a strong impact on the sensitivity and sensing range of the PISD.