High-temperature operation of silicon spin qubits up to 10 K with employing isoelectronic-trap-assisted tunnel FETs

Abstract

We have proposed silicon spin qubits based on tunnel FETs (TFETs) utilizing isoelectronic-trap technology, and experimentally demonstrated their record high-temperature operation up to 10 K in silicon spin qubits. The electron state within the bandgap served by the isoelectronic trap impurity acts as a quantum dot. We successfully observed Rabi oscillation which evidences qubit operation. The TFET spin qubits provide a significant advancement toward realizing the high-temperature operation of quantum computers or sensors with silicon technology.