Linearity Analysis of Gate Engineered Dopingless and Junctionless Silicon Nanowire FET

Abstract

This paper demonstrate the comparative study of various linearity as well as intermodulation distortion (IMD) parameters for junctionless (JL) and charge plasma (CP) dopingless nanowire FETs with dual material gate (DM). The various parameters considered for analysis includes higher order transconductance coefficients: gm2 (second-order) & gm3 (third-order), second-third order harmonic distortion HD2 &HD3, third order current intercept point (IIP3), third order IMD (IMD3), higher order voltage intercept points (VIP2 & VIP3) etc. The simulation study results reveals that analog parameters namely transconductance gm and transconductance gain factor (TGF) along with cut-off frequency fT are better for CP_DM. The other parameters including Cgg, gm3, HD2, HD3, IIP3 and VIP3 for JL_DM shows enhanced performance over CP_DM.