6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode

Abstract

In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. TJBS diode has a poor area of Schottky contact, which is the main cause of the increment of forward voltage (Vf) compared with DTJBS diode. In order to optimize the Vf, physical insights into 6.5kV silicon carbide (SiC) DTJBS diode is carried out by TCAD Silvaco, then shielding effect and current conduction capability are compared with TJBS and analyzed to verify the advantages of DTJBS’s lower Vf. Eventually, The Vf of the device achieves 1.89V while the current is 15A.