Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

Abstract

Integration of an enhancement-mode (E-mode) metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with a high-performance lateral Schottky barrier controlled Schottky (LSBS) rectifier in a compact layout is fabricated on an ultrathin-barrier AlGaN/GaN heterostructure grown on Si substrate. The state-of-the-art reverse conduction voltage (<inline-formula> <tex-math notation= LaTeX >${V}_{{\\text {rev}}}$ </tex-math></inline-formula>) of 0.455 V was achieved in the monolithic integrated E-mode power device with a threshold voltage of 1.55 V. <inline-formula> <tex-math notation= LaTeX >${V}_{{\\text {rev}}}$ </tex-math></inline-formula> exhibited a tiny temperature variation of 0.66% from 0 °C to 150 °C compared with that of 157% for the controlled E-mode HEMT.