Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS₂ Transistors

Abstract

The effects of the Si-substrate doping concentration on electrical characteristics of back-gate (BG) and top-gate (TG) MoS2 field-effect transistors (FETs) are investigated. The experimental results show that MoS2 FETs fabricated on different-concentration Si substrates using the same processing have similar interface characteristics and surface roughness of gate dielectric but exhibit different carrier mobility, and the higher the doping concentration, the higher the carrier mobility. This is because the carriers in Si substrate can screen the phonon scattering from the low-energy surface optical phonon produced by the soft Hf-O bonds in HfO2 dielectric, which will couple with the carriers in MoS2 channel, resulting in the reduction of the mobility, and the higher the Si-substrate concentration, the better the screening effect. Also, it is found that the BG dielectric scattering will impact on the mobility of the TG transistor, which causes a similar change trend of carrier mobility to that of the BG MoS2 FET as the Si-substrate concentration increases. Therefore, it can be revealed that the Si-substrate concentration has an important influence on the carrier mobility of MoS2 FETs, and the high Si-substrate concentration is beneficial for fabricating high-performance BG and TG MoS2 FETs.