Fully Analytical Compact Model for the I–V Characteristics of Large Radius Junctionless Nanowire FETs

Abstract

In this paper, we developed an analytical model for the <inline-formula><tex-math notation= LaTeX >$I{-}V$</tex-math></inline-formula> characteristics of junctionless nanowire FETs (JLNWFETs) in which the radius of the nanowire is large enough to allow quantum confinement effects to be neglected. The model is valid for all bias regimes, subthreshold, depletion and accumulation, and it is fully analytical, do not requiring the numerical solution of integrals or transcendental equations. Our compact model is validated in comparison to available results in the literature, with agreement equivalent to much more complex approaches.