Impacts of Proton Radiation on Heavy-Ion-Induced Single-Event Transients in 65-nm CMOS Technology

Abstract

<inline-formula> <tex-math notation= LaTeX >$3 \\times 10^{13}/\\text{cm}^{2}$ </tex-math></inline-formula> 1.2-MeV proton radiation will significantly increase heavy ion single-event transient (SET) cross sections and pulsewidths in 65-nm bulk CMOS technology. After proton radiation, heavy ion SET sensitivity increase in N-hit blocks is more than that in P-hit blocks. The analysis suggests that pMOS transistor on current (<inline-formula> <tex-math notation= LaTeX >$I_{\\mathrm{\\scriptscriptstyle ON}}$ </tex-math></inline-formula>) reduction due to total ionizing dose effects is the main reason for this effect. It is suggested that alternate heavy ion and proton experiments should be performed for radiation hardness assurance of candidate electronic devices used in deep space missions.