IEEE Transactions on Plasma Science | 2019
28-GHz High-Selectivity Bandpass Filters With Dual-Behavior Resonators Using GaAs Technology
Abstract
In this article, the design and implementation of two 28-GHz millimeter-wave on-chip high selectivity bandpass filters with coupled dual-behavior resonators are proposed. The proposed bandpass filters consist of coupled dual-behavior resonators with open/shorted stubs. Two and three out-of-band transmission zeros can be realized for the two bandpass filters. Two on-chip millimeter-wave bandpass filters are designed and fabricated for verification. The measurement results show that the insertion losses are both less than 2.2 dB at the center frequency. The sizes of the designed filters are <inline-formula> <tex-math notation= LaTeX >$2.556\\,\\,\\text {mm}\\times 1.23$ </tex-math></inline-formula> mm and <inline-formula> <tex-math notation= LaTeX >$3.155\\,\\,\\text {mm}\\times 1.47$ </tex-math></inline-formula> mm, respectively, including the pad.